A consideration for electrical activation of carbon implanted into gallium arsenideYOKOTA, K; EMI, N; SAKAGUCHI, M et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 84-87, issn 0254-0584Conference Paper

A fundamental study of excimer laser ablation using experimental and MD simulation methodHORIUCHI, K; ISHIYAMA, M; HASEBE, T et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 201-204, issn 0254-0584Conference Paper

Application of non-mass analyzed ion implanter to sub-quarter micron MOSFETsKAWASAKI, Y; MURAKAMI, T; KUROI, T et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 17-22, issn 0254-0584Conference Paper

Characterization of TiN films alternately treated with PVD and Cr ion implantationODA, K; OHARA, H; TSUJIOKA, M et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 266-269, issn 0254-0584Conference Paper

Effect of sputtering-cleaning on adhesion of the metallic films to polymer substratesFUJINAMI, Y; HAYASHI, H; EBE, A et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 102-105, issn 0254-0584Conference Paper

Erbium implantation in silicon: from materials properties to light emitting devicesPRIOLO, F; FRANZO, G; COFFA, S et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 273-279, issn 0254-0584Conference Paper

Formation of Fe₁₆N₂ in iron sheet by an ion implantation methodTSUBAKINO, H; ANDO, M; YAMAMOTO, A et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 301-304, issn 0254-0584Conference Paper

High-energy co-implantation of Ti and O ions into sapphireNAKAO, S; IKEYAMA, M; TAZAWA, M et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 342-345, issn 0254-0584Conference Paper

Luminescence band evolution in Si implanted SiO₂ layer upon high temperature annealingLIU, B. X; LAN, A. D; BAI, X. D et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 356-359, issn 0254-0584Conference Paper

Progress, demands and prospects for advanced ion beam processingYAMADA, I.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 5-14, issn 0254-0584Conference Paper

Sputterring and smoothing of metal surface with energetic gas cluster beamsINSEPOV, Z; YAMADA, I; SOSNOWSKI, M et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 234-237, issn 0254-0584Conference Paper

Surface smoothing effects with reactive cluster ion beamsTOYODA, N; KITANI, H; HAGIWARA, N et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 106-110, issn 0254-0584Conference Paper

Angular distributions of the particles sputtered with Ar cluster ionsTOYODA, N; KITANI, H; HAGIWARA, N et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 262-265, issn 0254-0584Conference Paper

Development of an ion source for the low energy ion implantationSAKAI, S; TAKAHASHI, M; TANJYO, M et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 44-48, issn 0254-0584Conference Paper

Highly corrosion resistant stainless steel with Si implanted/deposited phaseNISHIMURA, R; YAMAKAWA, K; ISHIGA, J et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 289-292, issn 0254-0584Conference Paper

Interfacial reactions of Ni on Si_0.76Ge_0.24 and Si by pulsed laser annealingLUO, J.-S; LIN, W.-T; CHANG, C. Y et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 160-163, issn 0254-0584Conference Paper

Morphology of AlN formed in aluminum by ion implantationFUKUMOTO, S; ANDO, M; TSUBAKINO, H et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 351-355, issn 0254-0584Conference Paper

Non-equilibrium garnet films grown by pulsed laser depositionWATANABE, N; TAKAHASHI, N; TSUSHIMA, K et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 173-176, issn 0254-0584Conference Paper

Properties of WC films synthesized by pulsed YAG laser depositionSUDA, Y; NAKAZONO, T; EBIHARA, K et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 177-180, issn 0254-0584Conference Paper

R.f. plasma nitriding of pure iron and stainless steelSAHARA, M; SATO, T; ITO, S et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 123-126, issn 0254-0584Conference Paper

Erosion resistance and durability improvement of polymers and composites in space environment by ion implantationISKANDEROVA, Z. A; KLEIMAN, J; MORISON, W. D et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 91-97, issn 0254-0584Conference Paper

Ion beam synthesis of TiSi₂ in (100) Si and (111)SiJIN, S; CHEN, L. J.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 360-364, issn 0254-0584Conference Paper

Nitride layers formed by nitrogen implantation with an energy scanning modeMIYAGAWA, Y; NAKAO, S; IKEYAMA, M et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 296-300, issn 0254-0584Conference Paper

Secondary defects in low-energy As- and BF₂-implanted SiTAMURA, M; HIROYAMA, Y; NISHIDA, A et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 23-27, issn 0254-0584Conference Paper

The microstructure of transparent and electrically conducting titanium nitride filmsKIUCHI, M; CHAYAHARA, A; TARUTANI, M et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 330-333, issn 0254-0584Conference Paper